2SD669A C(100-200)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD669 2SD669A TO- 126C TRANSISTOR (NPN) FEATURES Low Frequency Power Amplifier Complementary Pair with 2SB649/A 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. BASE Symbol Parameter VCBO Collector- Base Voltage VCEO Collector-Emitter Voltage Value Unit 180 V 2SD669 120 2SD669A 160 VEBO Emitter-Base Voltage IC Collector Current -Continuous PC 1. EMITTER V 5 V 1.5 A Collector Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO conditions Min Typ Max 180 IC=10mA, IB=0 2DS669 120 2SD669A 160 IE=1mA, IC=0 Unit V V 5 V Collector cut-off current ICBO VCB=160V, IE=0 10 µA Emitter cut-off current IEBO VEB=4V, IC=0 10 µA hFE(1) VCE=5V, IC=150mA DC current gain hFE(2) VCE(sat) Collector-emitter saturation voltage 2SD669 60 320 2SD669A 60 200 VCE=5V, IC=500mA 30 IC=500mA, IB=50mA 1 V 1.5 V Base-emitter voltage VBE VCE=5V, IC=150mA Transition frequency fT VCE=5V, IC=150mA 140 MHz VCB=10V, IE=0, f=1MHz 14 pF Cob Collector output capacitance CLASSIFICATION OF Rank Range hFE(1) B C D 2SD669 60-120 100-200 160-320 2SD669A 60-120 100-200 www.cj-elec.com 1 C,Nov,2014 TO-126C Package Outline Dimensions Symbol A A1 b b1 c D E e e1 L L1 P Φ1 Φ2 www.cj-elec.com Dimensions In Millimeters Min. Max. 3.000 3.400 1.800 2.200 0.660 0.860 1.170 1.370 0.450 0.600 7.800 8.200 10.800 11.200 2.280 TYP. 4.460 4.660 15.300 15.700 1.300 1.500 4.040 4.240 2.700 2.900 3.100 3.300 2 Dimensions In Inches Min. Max. 0.118 0.134 0.071 0.087 0.026 0.034 0.046 0.054 0.018 0.024 0.307 0.323 0.425 0.441 0.090 TYP. 0.176 0.183 0.602 0.618 0.051 0.059 0.159 0.167 0.106 0.114 0.122 0.130 C,Nov,2014